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| Transys Electronics LIMITED TO-220 Plastic-Encapsulated Transistors 2SB1185 FEATURES Power dissipation PCM: 2 W (Tamb=25) TRANSISTOR (PNP) TO-220 1. BASE 2. COLLECTOR 3. EMITTER Collector current -3 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-50A, IE=0 Ic=-1mA, IB=0 IE=-50A, IC=0 VCB=-40V, IE=0 VEB=-4V, IC=0 VCE=-3V, IC=-0.5A IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-5V, IC=-0.5A, f=30MHz VCB=-10V, IE=0, f=1MHz -60 -50 5 -1 -1 60 320 -1 -1.5 70 50 A A V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking D 60-120 E 100-200 F 160-320 |
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